Title :
High-power 1.5-μm InGaAsP-InP slab-coupled optical waveguide amplifier
Author :
Juodawlkis, P.W. ; Plant, J.J. ; Huang, R.K. ; Missaggia, L.J. ; Donnelly, J.P.
Author_Institution :
Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA, USA
Abstract :
We report the first demonstration of a high-power semiconductor optical amplifier (SOA) based on the slab-coupled optical waveguide concept. This concept allows the realization of SOAs having large fundamental optical modes, low loss, and small optical confinement factor. These attributes support large output saturation power, long length for efficient heat removal, and direct butt-coupling to single-mode fibers. The 1.5-μm InGaAsP-InP quantum-well amplifier described here has a length of 1 cm, 1/e2 intensity widths of 4 μm (vertical) and 8 μm (horizontal), a fiber-to-fiber gain of 13 dB, and a fiber-coupled output saturation power of 630 mW (+28 dBm). The measured butt-coupling efficiency between the amplifier and SMF-28 is 55%. Thus, the output saturation power of the amplifier itself is approximately 1.1 W (+31 dBm).
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical fibre couplers; optical losses; optical saturation; quantum well lasers; semiconductor optical amplifiers; waveguide lasers; 1.1 PW; 1.5 mum; 13 dB; 4 mum; 630 mW; 8 mum; InGaAsP-InP; InGaAsP-InP amplifier; butt coupling; efficient heat removal; fiber-to-fiber gain; fundamental optical modes; high-power amplifier; low loss; optical confinement factor; output saturation power; quantum-well amplifier; semiconductor optical amplifier; single-mode fibers; slab-coupled optical waveguide; High power amplifiers; Optical amplifiers; Optical losses; Optical saturation; Optical waveguides; Power amplifiers; Quantum wells; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission; Indium compounds; optical fiber coupling; power amplifiers; quantum-well devices; semiconductor optical amplifiers (SOAs);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.839770
