DocumentCode
1214479
Title
Junction-side up operation of (Al)GaInP lasers with very low threshold currents
Author
Unger, P. ; Roentgen, P. ; Bona, G.L.
Author_Institution
IBM Res. Div., Ruschlikon, Switzerland
Volume
28
Issue
16
fYear
1992
fDate
7/30/1992 12:00:00 AM
Firstpage
1531
Lastpage
1532
Abstract
Strained (Al)GaInP quantum-well ridge lasers with AlGaAs cladding layers have been fabricated on a 5 degrees -off oriented GaAs substrate. Owing to a heat spreading layer, the devices can be operated junction-side up with a CW threshold current of 13 mA. Singlemode operation is achieved up to power levels of 15 mW for devices with uncoated facets.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser modes; semiconductor junction lasers; (Al)GaInP lasers; 13 mA; 15 mW; AlGaAs cladding layers; CW threshold current; GaAs substrate; heat spreading layer; junction-side up operation; low threshold currents; ridge lasers; semiconductor lasers; single mode operation; strained quantum well; uncoated facets;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920972
Filename
153228
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