Title :
Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates
Author :
Wuu, D.S. ; Wang, W.K. ; Shih, W.C. ; Horng, R.H. ; Lee, C.E. ; Lin, W.Y. ; Fang, J.S.
Author_Institution :
Dept. of Mater. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Abstract :
Near-ultraviolet nitride-based light-emitting diodes (LEDs) with peak emission wavelengths around 410 nm were fabricated onto c-face patterned sapphire substrates (PSS). It was found that the electroluminescence intensity of the PSS LED shown 63% larger than that of the conventional LED. For a typical lamp-form PSS LED operating at a forward current of 20 mA, the output power and external quantum efficiency were estimated to be 10.4 mW and 14.1%, respectively. The improvement in the light intensity could be attributed to the decrease of threading dislocations and the increase of light extraction efficiency in the horizontal direction using a PSS.
Keywords :
III-V semiconductors; MOCVD; dislocations; electroluminescence; gallium compounds; indium compounds; light emitting diodes; optical fabrication; semiconductor growth; ultraviolet sources; 10.4 mW; 20 mA; 410 nm; Al2O3; InGaN-GaN; InGaN-GaN LED; LED fabrication; MOCVD; electroluminescence; enhanced output power; light extraction efficiency; light intensity; near-ultraviolet LED; nitride-based light-emitting diodes; patterned sapphire substrates; semiconductor growth; threading dislocations; Epitaxial layers; Etching; Gallium nitride; Light emitting diodes; Liquid crystal displays; Lithography; Materials science and technology; Power generation; Quantum well devices; Substrates; GaN; InGaN; light-emitting diode (LED); near ultraviolet (UV); patterned sapphire substrate (PSS);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.839012
