Title :
Silicon-carbide MESFET-based 400°C MEMS sensing and data telemetry
Author :
Wang, Run ; Ko, Wen H. ; Young, Darrin J.
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Case Western Reserve Univ., Cleveland, OH, USA
Abstract :
A prototype high-temperature silicon-carbide (SiC) MESFET-based microelectromechanical systems (MEMS) sensing and date telemetry module is reported for harsh environment applications. The module employs a MEMS silicon capacitive pressure sensor performing pressure to frequency conversion and an on-board spiral loop serving as an inductor for the LC resonator and also as a telemetry antenna. The system demonstrates a high-temperature performance up to 400°C, limited by the SiC MESFET characteristics, and achieves a telemetry distance of 1m.
Keywords :
Schottky gate field effect transistors; capacitive sensors; micromechanical resonators; microsensors; pressure sensors; silicon compounds; telemetry; wide band gap semiconductors; 400 C; LC resonator; MEMS sensor; MEMS silicon capacitive pressure sensor; SiC; data telemetry; frequency conversion; high-temperature performance; microelectromechanical systems sensor; on-board spiral loop; silicon-carbide MESFET; telemetry antenna; telemetry distance; Capacitive sensors; Frequency conversion; MESFETs; Microelectromechanical systems; Micromechanical devices; Prototypes; Sensor phenomena and characterization; Silicon carbide; Spirals; Telemetry; High-temperature sensing; microelectromechanical systems (MEMS) sensor; silicon–carbide (SiC) MESFET; telemetry;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2005.858927
