How do hot carriers degrade n-channel MOSFETs?

Explores the mechanisms of hot carrier degradation in n-MOSFETs. In addressing the problem of hot carrier degradation, we examine the carrier injection process, whereby electrons and holes are injected into the oxide from the channel. Next, we´ll look at the processes responsible for creating damage. Third, the impact of the damage on the MOSFET´s terminal characteristics is deternined. Then the damage process is modeled. Finally, we´ll address ways to reduce hot carrier degradation