Title :
35.8% space and 38.8% terrestrial 5J direct bonded cells
Author :
Chiu, P.T. ; Law, D.C. ; Woo, R.L. ; Singer, S.B. ; Bhusari, D. ; Hong, W.D. ; Zakaria, A. ; Boisvert, J. ; Mesropian, S. ; King, R.R. ; Karam, N.H.
Author_Institution :
Spectrolab Inc. a wholly owned subsidiary of the Boeing Co., Sylmar, CA, USA
Abstract :
Spectrolab has fabricated a direct semiconductor bonded space solar cell with an efficiency of 35.8% under the AM0 space spectrum. Using a similar technology, Spectrolab has achieved a 5-junction (5J) direct bonded terrestrial cell with a record efficiency of 38.8% under the one-sun AM1.5G terrestrial spectrum. Efforts to further improve the 5J cell efficiency have focused on development of the top 3 junctions (T3J) grown on GaAs. Experiments with top 3J isotype cells have yielded an improvement of 1% in current and 100 mV in voltage for the T3J. Spectrolab has also made significant improvements in its direct bonding process. The improved process has increased bond strengths by more than a factor of 5 and eliminated issues with large voids.
Keywords :
III-V semiconductors; bonding processes; gallium arsenide; solar cells; voids (solid); 5-junction direct bonded terrestrial cell; 5J direct bonded terrestrial cell; AMO space spectrum; GaAs; Spectrolab; bond strengt; direct semiconductor bonded space solar cell; efficiency 35.8 percent; efficiency 38.8 percent; one-sun AM1.5G terrestrial spectrum; void; voltage 100 mV; Bonding; Epitaxial growth; Epitaxial layers; Junctions; RNA; Wavelength measurement; Welding; direct bonding; multijunction cells; semiconductor bonding; wafer bonding;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6924957