Title :
High-speed (>40 GHz) integrated electroabsorption modulator based on identical epitaxial layer approach
Author :
Xiong, Bing ; Wang, Jian ; Zhang, Lijiang ; Tian, Jianbai ; Sun, Changzheng ; Luo, Yi
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
Abstract :
An electroabsorption (EA) modulator is monolithically integrated with a semiconductor optical amplifier (SOA) using a very simple identical epitaxial layer (IEL) scheme. By adopting dry-etched high-mesa structure and thick SiO2 beneath the bonding pad, the modulator capacitance is estimated to be less than 0.13 pF, and a 3-dBe bandwidth over 40 GHz has been demonstrated for the IEL-based integrated EA modulator. The SOA section helps reduce the coupling loss of the device, and the fiber-to-fiber loss is reduced from 18 to 3 dB at an injection current of 70 mA into the SOA section.
Keywords :
electro-optical modulation; electroabsorption; epitaxial layers; etching; high-speed optical techniques; integrated optoelectronics; optical fibre communication; optical fibre couplers; optical fibre losses; semiconductor optical amplifiers; 40 GHz; 70 mA; bonding pad; coupling loss; dry-etched structure; electroabsorption modulator; fiber-to-fiber loss; high-mesa structure; high-speed modulator; identical epitaxial layer approach; integrated modulator; modulator capacitance; monolithic integration; semiconductor optical amplifier; thick SiO2; Bandwidth; Capacitance; Epitaxial layers; IEL; Optical fiber communication; Optical fiber devices; Optical fiber losses; Optical modulation; Quantum well devices; Semiconductor optical amplifiers; High-speed electroabsorption (EA) modulator; identical epitaxial layer (IEL) approach; monolithic integration; semiconductor optical amplifier (SOA);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.839454
