Modeling and fabrication of GaAs solar cells with high dislocation tolerance

In this work we have evaluated thickness dependence of efficiency on high dislocated solar cells using MBE (for GaAs solar cells). Drift-diffusion modeling results show that by using ultra-thin design in solar cells with defects and/or high surface recombination, efficiency degradation could be prevented. Modeling results match with fabricated dislocated GaAs solar cells, thus improving the efficiency of hetero-epitaxial and metamorphic solar cells, without having need to grow thick buffers and/or using defect filtering techniques. Isc measurement with etching technique has been discussed, to find most of device parameters, such as SRH lifetime, surface recombination velocities and minority carrier diffusion lengths, without having need to grow multiple growths or TRPL structures; this technique could be extended to any III-V devices to find out efficiency limiting device parameters.