Title :
MBE-grown InGaP/GaAs/InGaAsP triple junction solar cells fabricated by advanced bonding technique
Author :
Sugaya, Takeyoshi ; Makita, Kikuo ; Mizuno, Hidenori ; Takeda, Akiko ; Mochizuki, Takashi ; Oshima, Ryuji ; Matsubara, Keigo ; Okano, Yoshinobu ; Niki, Shigeru
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
We report mechanically stacked InGaP (1.9 eV)/GaAs (1.42 eV) /InGaAsP (1.0 eV) triple junction solar cells grown using solid source molecular beam epitaxy (SS-MBE). High quality InGaP/GaAs tandem top and InGaAsP bottom cells are connected by advanced bonding technique using Pd nanoparticle arrays. The InGaAsP bottom cell has a high open circuit voltage (Voc) of 0.49 V, which indicates that high quality InGaAsP solar cells can be fabricated using SS-MBE. A fabricated triple junction solar cell has a high efficiency of 25.6% with high Voc of 2.66 V. We fabricate InGaAsP solar cells and InGaP/GaAs/InGaAsP triple junction solar cells by SS-MBE for the first time.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; nanoparticles; solar cell arrays; InGaP-GaAs-InGaAsP; MBE-grown triple junction solar cell fabrication; SS-MBE; bonding technique; electron volt energy 1 eV; electron volt energy 1.42 eV; electron volt energy 1.9 eV; nanoparticle arrays; open circuit voltage; solid source molecular beam epitaxy; voltage 0.49 V; Bonding; Gallium arsenide; Indium phosphide; Junctions; Molecular beam epitaxial growth; Photovoltaic cells; Temperature measurement; InGaAsP; InGaP; advanced bonding technique; molecular beam epitaxy; triple junction solar cells;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6924978
