Title :
GaNAsSb 1-eV solar cells for use in lattice-matched multi-junction architectures
Author :
Thomas, Tessamma ; Fuhrer, Markus ; Alvarez, Diego Alonso ; Ekins-Daukes, Ned ; Kian Hua Tan ; Wicaksono, Satrio ; Wan Khai Loke ; Soon Fatt Yoon ; Johnson, A.
Author_Institution :
Imperial Coll. London, London, UK
Abstract :
Photovoltaic devices made from a dilute nitride material, GaAsNSb, with band-gap close to 1eV have been developed and characterised. Homojunction devices of n-on-p and p-on-n type as well as an n-on-p GaAs/GaNAsSb heterojunction have been grown by molecular beam epitaxy. Optical and electrical characteristics are reported and a one-dimensional drift-diffusion model of internal quantum efficiency is used to estimate minority carrier diffusion lengths. The GaAs/GaNAsSb heterostructure produced AM1.5G short-circuit current of 23.6 mA/cm2, open-circuit voltage of 0.44V and fill factor of 67%. The model suggests that this performance is limited by both diffusion length and surface recombination.
Keywords :
III-V semiconductors; carrier lifetime; energy gap; gallium arsenide; molecular beam epitaxial growth; nitrogen compounds; short-circuit currents; solar cells; surface recombination; GaAs-GaNAsSb; band-gap; dilute nitride material; electrical characteristics; electron volt energy 1 eV; fill factor; homojunction devices; internal quantum efficiency; lattice-matched multijunction architectures; minority carrier diffusion lengths; molecular beam epitaxy; n-on-p type heterojunction; one-dimensional drift-diffusion model; open-circuit voltage; optical characteristics; p-on-n type heterojunction; photovoltaic devices; short-circuit current; solar cells; surface recombination; Absorption; Computer architecture; Gallium arsenide; Photonic band gap; Photovoltaic cells; Radiative recombination; concentrator; dilute nitride; multi-junction; quantum efficiency;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6924980
