Title :
Variable-area resonant tunnelling diodes using implanted gates
Author :
Goodings, C.J. ; Cleaver, J.R.A. ; Ahmed, Hameeza
Author_Institution :
Cambridge Univ., UK
fDate :
7/30/1992 12:00:00 AM
Abstract :
A new fabrication technique is reported for variable-area resonant tunneling diodes in which control is achieved by means of a reverse-biased, implanted p-n junction surrounding the device. The characteristics of such devices are shown and interpreted.
Keywords :
ion implantation; resonant tunnelling devices; tunnel diodes; RTD; fabrication technique; implanted gates; implanted p-n junction; resonant tunnelling diodes; reverse-biased junction; variable-area;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920975
