Title :
A 20 GHz 8 bit multiplexer IC implemented with 0.5 μm WNx /W-gate GaAs MESFET´s
Author :
Seshita, T. ; Ikeda, Y. ; Wakimoto, H. ; Ishida, K. ; Terada, T. ; Matsunaga, T. ; Suzuki, T. ; Kitaura, Y. ; Uchitomi, N.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
fDate :
12/1/1994 12:00:00 AM
Abstract :
An ultrahigh-speed 8 bit multiplexer (MUX) has been developed for future-generation optical-fiber communication systems having a data rate of 20 Gb/s. This IC was fabricated using a 0.5 μm WNx/W-gate GaAs MESFET process based on optical lithography, ion implantation, and furnace annealing for good reproducibility and high throughput. The WNx/W bilayer gate has a low sheet resistance, improving the circuit high frequency performance. To attain 20 GHz operation, advanced circuit techniques for the source-coupled FET logic (SCFL) were introduced. A cross coupled source-follower (CCSF) was developed mainly for the highest speed buffers to enhance the bandwidth. The first-stage T-type flip-flop was designed with optimization techniques and operated up to 21.1 GHz
Keywords :
III-V semiconductors; MESFET integrated circuits; annealing; field effect logic circuits; flip-flops; gallium arsenide; ion implantation; multiplexing; multiplexing equipment; optical fibre communication; optical transmitters; photolithography; tungsten; tungsten compounds; 0.5 micron; 20 GHz; 20 Gbit/s; 8 bit; GaAs-WN-W; T-type flip-flop; WNx/W-gate GaAs MESFETs; bilayer gate; cross coupled source-follower; furnace annealing; high frequency performance; ion implantation; multiplexer IC; optical lithography; optical-fiber communication systems; reproducibility; sheet resistance; source-coupled FET logic; throughput; Annealing; Furnaces; Gallium arsenide; Ion implantation; Lithography; MESFET integrated circuits; Multiplexing; Optical buffering; Particle beam optics; Photonic integrated circuits;
Journal_Title :
Solid-State Circuits, IEEE Journal of
