DocumentCode
1214897
Title
Breakdown walkout and its reduction in high-voltage pLDMOS transistors on thin epitaxial layer
Author
Van Calster, A. ; Witters, J.
Volume
28
Issue
16
fYear
1992
fDate
7/30/1992 12:00:00 AM
Firstpage
1537
Lastpage
1538
Abstract
Breakdown walkout in high-voltage pLDMOS transistors on a thin epitaxial layer is observed and investigated by using ion implantation to vary the surface electric field in the drift region. Results show that the walkout is closely related to the surface field and can be reduced by determining the correct extent of ion implantation.
Keywords
electric breakdown of solids; electric fields; insulated gate field effect transistors; ion implantation; power transistors; HV type; breakdown walkout; drift region; high-voltage; ion implantation; lateral double-diffused device; p-channel device; pLDMOS transistors; surface electric field; thin epitaxial layer;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920976
Filename
153232
Link To Document