DocumentCode
1214903
Title
High Bandwidth Operation of Directly Modulated Laser Based on Quantum-Dash InAs–InP Material at 1.55 
m
Author
Dagens, B. ; Make, D. ; Lelarge, F. ; Rousseau, B. ; Calligaro, M. ; Carbonnelle, M. ; Pommereau, F. ; Accard, A. ; Poingt, F. ; Le Gouezigou, L. ; Dernazaretian, C. ; Le Gouezigou, O. ; Provost, J.-G. ; van Dijk, F. ; Resneau, P. ; Krakowski, M. ; Duan,
Author_Institution
III-V Lab., Alcatel-Thales, Palaiseau
Volume
20
Issue
11
fYear
2008
fDate
6/1/2008 12:00:00 AM
Firstpage
903
Lastpage
905
Abstract
The modulation bandwidth has been identified as a specific limitation of quantum-dot or quantum-dash (QDash) lasers for direct modulation application. Solutions using tunnel injection and p-doping have already been demonstrated to increase the modulation bandwidth above 10 GHz, but with complex tunnel injection design and p-doping induced high internal losses. We show in this letter that the use of optimized QDashes and waveguide structure is sufficient to reach such high bandwidth at 1.55 mum. The device is validated by a large signal modulation demonstration at 10 Gb/s.
Keywords
III-V semiconductors; indium compounds; optical modulation; quantum dot lasers; semiconductor doping; waveguide lasers; InAs-InP; QDash lasers; bit rate 10 Gbit/s; directly modulated laser; high bandwidth operation; modulation bandwidth; p-doping; quantum-dash InAs-InP material; quantum-dash lasers; quantum-dot lasers; tunnel injection; waveguide structure; wavelength 1.55 mum; Bandwidth; Gas lasers; Laser feedback; Molecular beam epitaxial growth; Optical materials; Optical modulation; Optical waveguides; Quantum dots; Threshold current; Waveguide lasers; InAs–InP quantum dashes (QDashes); InGaAsP–InP lasers; directly modulated laser; gas source molecular beam epitaxy; modulation bandwidth; optical communication;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2008.922349
Filename
4515988
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