Title :
Carrier-induced refractive index changes in InP-based circular microresonators for low-voltage high-speed modulation
Author :
Sadagopan, Thiruvikraman ; Choi, Seung June ; Sang Jun Choi ; Djordjev, Kostadin ; Dapkus, P.Daniel
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
Optical InP-based microresonator modulators which achieve low-voltage high-bandwidth modulation are presented, where resonant wavelength tuning of a circular resonator by free carrier injection is used as the modulation mechanism. Since thermal effects in small resonant cavities and switching speed limitations posed by minority carrier lifetime are the primary concerns in such types of devices, ion bombardment in microtoroidal structures is used to increase the speed of response. The modulation speed is enhanced by an order of magnitude.
Keywords :
III-V semiconductors; carrier lifetime; electro-optical modulation; indium compounds; ion implantation; micro-optics; microcavities; optical resonators; optical tuning; refractive index; semiconductor doping; thermo-optical effects; InP; circular microresonator modulator; free carrier injection; ion bombardment; microtoroidal structures; minority carrier lifetime; modulation speed; refractive index; resonant wavelength tuning; thermal effects; Charge carrier lifetime; High speed optical techniques; Microcavities; Optical modulation; Optical refraction; Optical resonators; Optical tuning; Optical variables control; Refractive index; Resonance; High speed; ion bombardment; low voltage; microresonators; modulators; tunable filters; wavelength-division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.839773
