DocumentCode :
1214934
Title :
Low-Threshold 1.3- 
m GaInNAs Quantum-Well Lasers Using Quaternary-Barrier Structures
Author :
Jin, C.Y. ; Liu, H.Y. ; Zhang, S.Y. ; Hopkinson, M.
Author_Institution :
Dept. of Frontier Res. & Technol., Kobe Univ., Kobe
Volume :
20
Issue :
11
fYear :
2008
fDate :
6/1/2008 12:00:00 AM
Firstpage :
942
Lastpage :
944
Abstract :
GaInNAs quaternary-barrier structures, where indium is incorporated to achieve the lattice-matched condition, have been employed for 1.3-m GaInNAs-GaAs single- (SQW) and triple-quantum-well (TQW) lasers. Compared to a GaNAs ternary-barrier structure, photoluminescence results from the quaternary-barrier sample show improved optical properties. Threshold current densities have been achieved with the lowest values of 150 and 529 A/cm2 for GaInNAs SQW and TQW lasers at room temperature, respectively.
Keywords :
III-V semiconductors; photoluminescence; quantum well lasers; GaInNAs-GaAs; lattice-matched condition; low-threshold quantum-well laser; photoluminescence; quaternary-barrier structures; single quantum well laser; triple quantum well laser; wavelength 1.3 mum; Capacitive sensors; Gallium arsenide; III-V semiconductor materials; Indium; Nitrogen; Optical materials; Photoluminescence; Quantum well lasers; Radio frequency; Semiconductor lasers; GaInNAs; quantum well (QW); quaternary barrier; semiconductor laser;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2008.922914
Filename :
4515991
Link To Document :
