Apparent doping-dependence of the a-Si:H/c-Si interface degradation upon ITO sputtering

In this work, we address the doping dependence of SHJ solar cell precursor passivation degradation upon ITO sputtering by PVD. We report the higher apparent sensitivity of the emitter. By varying the doping, we were able to demonstrate that the emitter is not necessarily less resilient to this process. Indeed the same amount of defects can be created on the BSF side all the while remaining screened thanks to the highly effective field-effect provided by the capping n-doped a-Si:H layer.