The determination of interfacial and bulk properties of gold in m.o.s. structures using quasiequilibrium and non-steady-state linear voltage-ramp techniques

Author

Faraone, L. ; Nassibian, A.G. ; Simmons, J.G.

Volume

3

Issue

5

fYear

1979

fDate

9/1/1979 12:00:00 AM

Firstpage

121

Lastpage

126

Abstract

The effect of gold recombination centres on the trapping state at the Si-SiO2interface, and in the bulk, has been studied. The technique involves applying a linear voltage-ramp to the m.o.s. device and measuring the resulting I/V characteristic. From the quasiequilibrium I/V curves, it is apparent that gold-doping produces a pronounced peak in the interfacial trap distribution occuring at energy Ev + 0.6eV with a density of Nss = 2.5 ¿¿ 1011(cm2eV)¿¿1. Subsequent non-steady-state I/V measurements are used to study the bulk recombination properties of gold, and thus determine a value for the capture cross-section (¿¿p ¿¿ 1.1 ¿¿ 10¿¿15 cm2).

Keywords

deep levels; electron-hole recombination; gold; metal-insulator-semiconductor structures; semiconductor-insulator boundaries; Au; MISS; MOS capacitor; MOS structures; Si-SiO2 interface; bulk properties; bulk recombination properties; capture cross section; current voltage characteristics; interfacial properties; nonsteady state linear voltage ramp technique; quasiequilibrium technique; recombination centres; trapping state;

fLanguage

English

Journal_Title

Solid-State and Electron Devices, IEE Journal on

Publisher

iet

ISSN

0308-6968

Type

jour

DOI

10.1049/ij-ssed.1979.0026

Filename

4807778