Title :
Computer simulation of a dual gate GaAs field-effect transistor using the Monte Carlo method
Author_Institution :
University of Reading, Computer Science Department, Reading, UK
fDate :
9/1/1979 12:00:00 AM
Abstract :
The V/I characteristics of a gallium arsenide dual-gate field-effect transistor have been simulated numerically, using the Monte Carlo method. The transconductances extracted from these characteristics agree with those from a real device of the same geometrical and physical description.
Keywords :
Monte Carlo methods; digital simulation; electronic engineering computing; field effect transistors; GaAs; Monte Carlo method; computer simulation; current voltage characteristics; dual gate FET;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1979.0028
