Title :
Evidence for two types of radiation-induced trapped positive charge
Author :
Freitag, R.K. ; Brown, D.B. ; Dozier, C.M.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
New experimental evidence is presented that supports a model that assumes two distinguishable types of positive oxide charge following x-irradiation. Two new experiments have been performed designed to separate the annealing properties of the two types of trapped positive charge. It is found that one type of trapped positive charge can be permanently removed at room temperature using substrate hot electron injection. The second type of trapped positive charge is found to be stable at temperatures up to 160/spl deg/C.<>
Keywords :
MIS structures; X-ray effects; annealing; hot carriers; silicon compounds; 160 C; SiO/sub 2/; X-irradiation; annealing; positive oxide charge; radiation-induced trapped positive charge; substrate hot electron injection; Annealing; Charge carrier processes; Electron traps; Laboratories; Silicon; Stress; Substrate hot electron injection; Temperature; Terminology; Tunneling;
Journal_Title :
Nuclear Science, IEEE Transactions on
