Title :
Time dependence of switching oxide traps
Author :
Lelis, Aivars J. ; Oldham, Timothy R.
Author_Institution :
US Army Res. Lab., Adelphi, MD, USA
Abstract :
Metal-oxide semiconductor field-effect transistors (MOSFETs) were irradiated and then annealed under alternating positive and negative bias. The magnitude of the reversible trapped-oxide charge component decayed over the course of several cycles (of 3/spl times/10/sup 3/ s each) in one of two processes studied. The HDL hole trap model is shown to explain these and other recent results.<>
Keywords :
MOSFET; X-ray effects; annealing; field effect transistor switches; hole traps; HDL hole trap model; MOSFETs; annealing; irradiation; metal-oxide semiconductor field-effect transistors; reversible trapped-oxide charge; switching oxide traps; time dependence; Annealing; Atomic measurements; Bonding; Current measurement; Electric variables measurement; Electron traps; Hardware design languages; Laboratories; Paramagnetic resonance; Switches;
Journal_Title :
Nuclear Science, IEEE Transactions on
