Dual-junction GaAsP/SiGe on silicon tandem solar cells

Author

Diaz, M. ; Li Wang ; Gerger, Andrew ; Lochtefeld, Anthony ; Ebert, C. ; Opila, Robert ; Perez-Wurfl, Ivan ; Barnett, Allen

Author_Institution

Sch. of Photovoltaic & Renewable Energy Eng., Univ. of New South Wales, Sydney, NSW, Australia

fYear

2014

fDate

8-13 June 2014

Abstract

GaAsP/SiGe dual-junction solar cells have been grown on silicon substrates which have the potential of achieving tandem efficiencies of 40%. This lattice-matched structure facilitates high performance from the III-V top cell while maintaining the cost advantages of silicon solar cells. The SiGe graded buffer allows for lattice matching of the top and bottom cell while providing a low dislocation interface between the silicon substrate and the device layers. Initial structures have reached an efficiency of 18.9%. Near term improvements to 25.0% under AM1.5G will be described.

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; germanium compounds; lattice theory; silicon compounds; solar cells; III-V top cell; gallium arsenide phosphide dual-junction solar cells; lattice-matched structure; low dislocation interface; silicon germanium dual-junction solar cells; silicon germanium graded buffer; silicon substrates; silicon tandem solar cells; tandem efficiencies; Fabrication; Performance evaluation; Photovoltaic cells; Photovoltaic systems; Silicon; Silicon germanium; Substrates; gallium arsenide phosphide; semiconductor materials; silicon germanium; tandem solar cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/PVSC.2014.6925042

Filename

6925042