DocumentCode
1215412
Title
The noise characteristics of baritt diodes with traps
Author
Harutunian, V.M. ; Buniatian, V.V.
Author_Institution
Academy of Sciences of the Armenian SSR, Institute of Radiophysics and Electronics, K. Marx Politechnical Institute, Yerevan, USSR
Volume
3
Issue
5
fYear
1979
fDate
9/1/1979 12:00:00 AM
Firstpage
155
Lastpage
160
Abstract
The noise characteristics of a semiconductor punchthrough structure are examined for operation under low-field conditions, i.e. constant mobility, and for trap levels in the bandgap of the semiconductor. It is shown that the noise measure is decreased under the influence of trapping of injected carriers, for the small-signal injection approximation. With the increase of the concentration of traps, the noise measure decreases, but the frequency band, where it takes place, narrows and is displaced to a lower frequency.
Keywords
BARITT diodes; electron device noise; random noise; BARITT diodes; constant mobility; injected carrier trapping; noise characteristics; semiconductor punchthrough structure; trap levels;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Journal on
Publisher
iet
ISSN
0308-6968
Type
jour
DOI
10.1049/ij-ssed.1979.0032
Filename
4807784
Link To Document