Title :
The noise characteristics of baritt diodes with traps
Author :
Harutunian, V.M. ; Buniatian, V.V.
Author_Institution :
Academy of Sciences of the Armenian SSR, Institute of Radiophysics and Electronics, K. Marx Politechnical Institute, Yerevan, USSR
fDate :
9/1/1979 12:00:00 AM
Abstract :
The noise characteristics of a semiconductor punchthrough structure are examined for operation under low-field conditions, i.e. constant mobility, and for trap levels in the bandgap of the semiconductor. It is shown that the noise measure is decreased under the influence of trapping of injected carriers, for the small-signal injection approximation. With the increase of the concentration of traps, the noise measure decreases, but the frequency band, where it takes place, narrows and is displaced to a lower frequency.
Keywords :
BARITT diodes; electron device noise; random noise; BARITT diodes; constant mobility; injected carrier trapping; noise characteristics; semiconductor punchthrough structure; trap levels;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1979.0032
