Growth and characteristics of GaInAsp/Inp double heterostructure lasers

Author

Greene, P.D. ; Henshall, G.D.

Author_Institution

Standard Telecommunication Laboratories Limited, Harlow, UK

Volume

3

Issue

6

fYear

1979

fDate

11/1/1979 12:00:00 AM

Firstpage

174

Lastpage

178

Abstract

A horizontal furnace system has been developed for growth by liquid-phase epitaxy of multilayer laser structures consisting of InP and (Ga, In) (As, P) incorporating a number of novel features. Double heterostructure lasers emitting at l.3¿¿m with threshold current densities as low as 900 A/cm2have been made. Measurements of the far-field beam angles have allowed the dielectric constant step between the active quaternary and passive layers for lasers emitting at both 1.15 ¿¿m and 1.3 ¿¿m (im, to be deduced. Oxide-insulated stripe-geometry c.w. lasers, operating in a single longitudinal mode, have been made with threshold currents down to 180 mA

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser transitions; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; 1.3 mu m; GaInAsP/InP double heterostructure lasers; LPE growth; dielectric constant; far field beam angles; horizontal furnace system; oxide insulated stripe geometry CW lasers; semiconductor growth; threshold current density;

fLanguage

English

Journal_Title

Solid-State and Electron Devices, IEE Journal on

Publisher

iet

ISSN

0308-6968

Type

jour

DOI

10.1049/ij-ssed.1979.0035

Filename

4807788