Determination of the Fermi level position for neutron irradiated high resistivity silicon detectors and materials using the transient charge technique (TChT)

Author

Eremin, V. ; Li, Z.

Author_Institution

Brookhaven Nat. Lab., Upton, NY, USA

Volume

41

Issue

6

fYear

1994

Firstpage

1907

Lastpage

1912

Abstract

The transient charge technique (TChT) has been used in this work to study the electrical properties in both space charge region (SCR) and electrical neutral bulk (ENB) of neutron irradiated high resistivity (4-6 k/spl Omega/-cm) silicon particle detectors. Detectors irradiated to various neutron fluences were measured by TChT at various biases and temperatures from 110 K to 300 K. The Fermi level, obtained from the Arrhenius plot of the time constant of the ohmic relaxation component of the charge shape, has been found to stabilize around E/sub c/-0.47 to 0.50 eV at high fluences (/spl Phi/n>10/sup 13/ n/cm/sup 2/).<>

Keywords

Fermi level; neutron effects; silicon radiation detectors; space charge; transient analysis; 110 to 300 K; 4 to 6 kohmcm; Arrhenius plot; Fermi level; Si; electrical neutral bulk; electrical properties; high resistivity silicon particle detectors; neutron irradiation; ohmic relaxation; particle detectors; space charge region; time constant; transient charge technique; Charge measurement; Conductivity; Current measurement; Neutrons; Radiation detectors; Shape measurement; Silicon; Space charge; Thyristors; Time measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.340522

Filename

340522