2 V-operated InGaP-AlGaAs-InGaAs enhancement-mode pseudomorphic HEMT

Author

Chu, L.H. ; Chang, E.Y. ; Chen, S.H. ; Lien, Y.C. ; Chang, C.Y.

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

26

Issue

2

fYear

2005

Firstpage

53

Lastpage

55

Abstract

A low-voltage single power supply enhancement-mode InGaP-AlGaAs-InGaAs pseudomorphic high-electron mobility transistor (PHEMT) is reported for the first time. The fabricated 0.5×160 μm² device shows low knee voltage of 0.3 V, drain-source current (I/sub DS/) of 375 mA/mm and maximum transconductance of 550 mS/mm when drain-source voltage (V/sub DS/) was 2.5 V. High-frequency performance was also achieved; the cut-off frequency(F_T) is 60 GHz and maximum oscillation frequency(F_max) is 128 GHz. The noise figure of the 160-μm gate width device at 17 GHz was measured to be 1.02 dB with 10.12 dB associated gain. The E-mode InGaP-AlGaAs-InGaAs PHEMT exhibits a high output power density of 453 mW/mm with a high linear gain of 30.5 dB at 2.4 GHz. The E-mode PHEMT can also achieve a high maximum power added efficiency (PAE) of 70%, when tuned for maximum PAE.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; 0.3 V; 1.02 dB; 10.12 dB; 128 GHz; 160 micron; 2 V; 2.4 GHz; 30.5 dB; 60 GHz; InGaP-AlGaAs-InGaAs; drain-source current; enhancement-mode pseudomorphic HEMT; oscillation frequency; power added efficiency; pseudomorphic high-electron mobility transistor; single-voltage supply; transconductance; Cutoff frequency; Gain; HEMTs; Knee; Low voltage; MODFETs; Noise figure; PHEMTs; Power supplies; Transconductance; Enhancement mode; InGaP; InGaP–InGaAs; PHEMT; single-voltage supply;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.841184

Filename

1386392