Title :
Characteristic and near field for a broad SiO2insulated d.h. laser: experiment and theory
Author :
Buus, J. ; Stubkjaer, K.
Author_Institution :
Technical University of Denmark, Electromagnetics Institute, Lyngby, Denmark
fDate :
11/1/1979 12:00:00 AM
Abstract :
A detailed experimental investigation of a SiO2insulated GaAlAs laser is performed. The results are compared with theoretical calculations, including strain from the SiO2layer, and good agreement is found. The theory can account for a kink seen in the light/cunent characteristic.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser theory; semiconductor junction lasers; SiO2 insulated GaAlAs DH laser; light/current characteristic;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1979.0042
