Title :
On the impact of low fluence irradiation with MeV particles on silicon diode characteristics and related material properties
Author :
Vanhellemont, J. ; Simoen, E. ; Claeys, C. ; Kaniava, A. ; Gaubas, E. ; Bosman, G. ; Johlander, B. ; Adams, L. ; Clauws, P.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
The electrical activity of MeV particle irradiation induced lattice defects in silicon, is studied through their impact on diode characteristics and on minority carrier lifetime. For the first time results are presented on low-frequency noise spectroscopy for radiation damage and substrate characterisation. The results show that diodes on Cz substrates are more radiation hard than on epi- and FZ substrates but have a poorer quality before irradiation with respect to noise, minority carrier lifetime and I/V characteristics.<>
Keywords :
carrier lifetime; elemental semiconductors; ion beam effects; minority carriers; semiconductor device noise; semiconductor diodes; silicon; Cz substrates; FZ substrates; I/V characteristics; MeV particle irradiation; Si; electrical activity; epilayer substrates; lattice defects; low fluence irradiation; low-frequency noise spectroscopy; material properties; minority carrier lifetime; radiation damage; radiation hardness; silicon diode; Bridges; Charge carrier lifetime; Degradation; Diodes; Lattices; Low-frequency noise; Material properties; Protons; Silicon; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
