Study of the defects induced in N-type silicon irradiated by 1-3 MeV protons

Author

Ntsoenzok, E. ; Barbot, J.F. ; Desgardin, P. ; Vernois, J. ; Blanchard, C. ; Isabelle, D.B.

Author_Institution

CERI, CNRS, Orleans, France

Volume

41

Issue

6

fYear

1994

Firstpage

1932

Lastpage

1936

Abstract

The electrical properties of semiconductor components can be greatly modified by proton implantation. Spreading resistance, C-V (capacitance voltage) and DLTS (deep levels transient spectroscopy) measurements have been used to characterize N-type silicon irradiated by MeV proton at fluences up to 10/sup 14/p/sup +/cm/sup -2/. The greatest drawback induced by proton implantation is the overdoping effect which can strongly reduce device efficiency. The present work reports this effect in both annealed and unannealed samples.<>

Keywords

annealing; deep level transient spectroscopy; defect states; electrical resistivity; elemental semiconductors; ion implantation; proton effects; silicon; 1 to 3 MeV; DLTS; N-type silicon; Si; annealing; capacitance voltage measurements; defects; device efficiency; electrical properties; overdoping; proton implantation; proton irradiation; semiconductor; spreading resistance; Annealing; Capacitance measurement; Capacitance-voltage characteristics; Conductivity; Electric resistance; Electrical resistance measurement; Hydrogen; Protons; Silicon; Spectroscopy;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.340526

Filename

340526