Title :
A new Pd-InP Schottky hydrogen sensor fabricated by electrophoretic deposition with Pd nanoparticles
Author :
Chou, Yen-I ; Chen, Chia-Ming ; Liu, Wen-Chau ; Chen, Huey-Ing
Author_Institution :
Dept. of Chem. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan
Abstract :
In this letter, a new Pd-InP Schottky diode hydrogen sensor fabricated by electrophoretic deposition (EPD) combined with nanosized Pd particles is first proposed and demonstrated. Experimentally, the studied device exhibited excellent current-voltage rectifying characteristics with a large Schottky barrier height (SBH) of 829 meV. At 303 K, a high saturation sensitivity ratio of 38 was found under a very low hydrogen concentration of 15 ppm H2/air. As raising the hydrogen concentration to 1.0% H2/air, the SBH lowering of the studied devic"dq"e reached to 307 meV and the sensitivity ratio was high as 1.29×105 with a very rapid response, which far prevailed over those fabricated by the conventional thermal evaporation and electroless plating techniques. Consequentially, the EPD Pd-InP Schottky diode with extremely effective Pd gate is promising for the fabrication of high-performance hydrogen sensors.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; electrophoretic coating techniques; gas sensors; hydrogen; indium compounds; nanoparticles; palladium; 303 K; 307 meV; 829 meV; Pd nanoparticles; Pd-InP; Schottky barrier height; Schottky hydrogen sensor; Temkin model; current-voltage rectifying characteristics; electroless plating; electrophoretic deposition; high saturation sensitivity ratio; hydrogen concentration; thermal evaporation; Chemical sensors; Grain size; Hydrogen; Nanoparticles; Palladium; Propellants; Schottky barriers; Schottky diodes; Sensor phenomena and characterization; Tellurium;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.840736
