Title :
Germanium pMOSFETs with Schottky-barrier germanide S/D, high-κ gate dielectric and metal gate
Author :
Zhu, Shiyang ; Rui Li ; Lee, S.J. ; Li, Rui ; Du, Anyan ; Singh, Jagar ; Zhu, Chunxiang ; Chin, Albert ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
Schottky-barrier source/drain (S/D) germanium p-channel MOSFETs are demonstrated for the first time with HfAlO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as ∼5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi-Si contact as well as the higher mobility of Ge channel than that of Si.
Keywords :
MOSFET; Schottky barriers; dielectric materials; germanium alloys; hafnium compounds; nickel alloys; platinum compounds; tantalum compounds; HfAlO; HfN-TaN; NiGe-Ge; NiGe-Ge contact; PtSi-Si contact; Schottky barrier; Schottky-barrier germanide source-drain; germanium pMOSFET; high-κ gate dielectric; metal gate; p-channel MOSFET; Dielectric substrates; Fabrication; Germanium; Laboratories; MOSFETs; Microelectronics; Schottky barriers; Silicon; Sputter etching; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.841462
