DocumentCode
1215585
Title
Total dose and proton testing of a commercial HgCdTe array
Author
Hopkinson, G.R. ; Baddiley, C.J. ; Guy, D.R.P. ; Parsons, J.E.
Author_Institution
Sira Ltd., Chislehurst, UK
Volume
41
Issue
6
fYear
1994
Firstpage
1966
Lastpage
1973
Abstract
The radiation tolerance of a commercially available 256/spl times/4 HgCdTe array has been measured. The main effects were ionization-induced and produced changes in diode slope resistance and CMOS multiplexer characteristics particularly the onset of parasitic leakage currents after /spl sim/15 krad(Si). However these effects annealed with storage above 20/spl deg/C.<>
Keywords
II-VI semiconductors; cadmium compounds; infrared imaging; leakage currents; mercury compounds; photodiodes; proton effects; remote sensing; 15 krad; CMOS multiplexer characteristics; Earth imaging applications; HgCdTe; HgCdTe array; IR imaging; IR photodiode array; annealing; diode slope resistance; ionization-induced changes; parasitic leakage currents; proton testing; radiation tolerance; space radiation; total dose; Annealing; CMOS process; Circuits; Diodes; Instruments; Multiplexing; Photodiodes; Protons; Temperature; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.340531
Filename
340531
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