Title :
Total dose and proton testing of a commercial HgCdTe array
Author :
Hopkinson, G.R. ; Baddiley, C.J. ; Guy, D.R.P. ; Parsons, J.E.
Author_Institution :
Sira Ltd., Chislehurst, UK
Abstract :
The radiation tolerance of a commercially available 256/spl times/4 HgCdTe array has been measured. The main effects were ionization-induced and produced changes in diode slope resistance and CMOS multiplexer characteristics particularly the onset of parasitic leakage currents after /spl sim/15 krad(Si). However these effects annealed with storage above 20/spl deg/C.<>
Keywords :
II-VI semiconductors; cadmium compounds; infrared imaging; leakage currents; mercury compounds; photodiodes; proton effects; remote sensing; 15 krad; CMOS multiplexer characteristics; Earth imaging applications; HgCdTe; HgCdTe array; IR imaging; IR photodiode array; annealing; diode slope resistance; ionization-induced changes; parasitic leakage currents; proton testing; radiation tolerance; space radiation; total dose; Annealing; CMOS process; Circuits; Diodes; Instruments; Multiplexing; Photodiodes; Protons; Temperature; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
