Proton-induced charge transfer degradation in CCDs for near-room temperature applications

Author

Hopkins, I.H. ; Hopkinson, G.R. ; Johlander, B.

Author_Institution

SIRA/UCL Postgrad. Centr, Chislehurst, UK

Volume

41

Issue

6

fYear

1994

Firstpage

1984

Lastpage

1991

Abstract

An optical technique for measuring charge transfer inefficiency (CTI) in CCDs, operated under near-room temperature, high readout rate conditions, is described. It is possible to measure trap emission times and CTI dependence on signal size, background charge and clock waveform shape to high accuracy, both for serial and parallel transfers. It is shown that the presence of background charge (or "fat zero") can substantially improve charge transfer efficiency.<>

Keywords

charge measurement; charge-coupled devices; proton effects; CCDs; CTI dependence; background charge; charge transfer efficiency; charge transfer inefficiency; clock waveform shape; high readout rate conditions; near-room temperature applications; optical technique; parallel transfers; proton-induced charge transfer degradation; serial and parallel transfers; signal size; trap emission times; Charge coupled devices; Charge measurement; Charge transfer; Current measurement; Degradation; Extraterrestrial measurements; Instruments; Optical sensors; Size measurement; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.340533

Filename

340533