DocumentCode :
121565
Title :
Application of the terrestrial photovoltaic module accelerated test-to-failure protocol
Author :
Hacke, Peter ; Terwilliger, Kent ; Glick, Stephen ; Smith, Ross ; Perrin, Greg ; Kurtz, S. ; Bosco, Nick ; Wohlgemuth, John
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
fYear :
2014
fDate :
8-13 June 2014
Abstract :
The Terrestrial Photovoltaic Module Accelerated Test-to-Failure Protocol was applied to seven crystalline silicon module types to test the durability of the various module constructions on a quantitative basis in chamber and to evaluate the protocol itself. The modules under test are subdivided into three accelerated lifetime testing paths: 85°C/85% relative humidity with system voltage bias, thermal cycling between - 40°C and 85°C, and paths that alternate between humidity with bias (one in each polarity) and thermal cycling. Three of the module types were also fielded to ascertain degradation mechanisms occurring in the natural environment for comparison to the mechanisms seen in the accelerated testing. Potential induced-degradation in modules negatively biased and silicon nitride antireflective coating thinning on cells in modules positively biased are among the important mechanisms that are seen both in the modules stressed in the natural environment and in chamber. Junction box failure, cell breakage, and acid-assisted metallization degradation are included in the mechanisms seen in chamber tests, and they vary significantly between module types. Per a goal of the accelerated test protocol, we found examples of modules with components and process methods that showed degradation mechanisms that occurred faster than incumbents that had satisfactory field experience. These were evaluated as opportunities for durability improvement. Conversely, types that showed substantial improvement were also seen, especially with respect to system voltage stress durability.
Keywords :
durability; elemental semiconductors; life testing; silicon; silicon compounds; solar cells; accelerated lifetime testing path; accelerated test-to-failure protocol; acid-assisted metallization degradation; cell breakage; chamber tests; crystalline silicon module types; degradation mechanism; durability improvement; durability testing; junction box failure; module constructions; natural environment; potential induced-degradation; process method; relative humidity; silicon nitride antireflective coating thinning; system voltage bias; system voltage stress durability; temperature 85 degC; terrestrial photovoltaic module; thermal cycling; DH-HEMTs; Degradation; Junctions; Life estimation; Protocols; Stress; Testing; Energy conversion; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
Type :
conf
DOI :
10.1109/PVSC.2014.6925066
Filename :
6925066
Link To Document :
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