Title :
High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain
Author :
Maeda, Tatsuro ; Ikeda, Keiji ; Nakaharai, Shu ; Tezuka, Tsutomu ; Sugiyama, Naoharu ; Moriyama, Yoshihiko ; Takagi, Shinichi
Author_Institution :
Adv. Semicond. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan
Abstract :
We demonstrate, for the first time, successful operation of Schottky-barrier source/drain (S/D) germanium-on-insulator (GOI) MOSFETs, where a buried oxide and a silicon substrate are used as a gate dielectric and a bottom gate electrode, respectively. Excellent performance of p-type MOSFETs using Pt germanide S/D is presented in the accumulation mode. The hole mobility enhancement of 50%∼40% against the universal hole mobility of Si MOSFETs is obtained for the accumulated GOI channel with the SiO2-Ge interface.
Keywords :
MOSFET; Schottky barriers; elemental semiconductors; germanium; hole mobility; silicon compounds; Pt germanide Schottky source/drain; Schottky-barrier source/drain; SiO2-Ge; accumulated GOI channel; accumulation mode; bottom gate electrode; buried oxide; gate dielectric; high mobility Ge-on-insulator p-channel MOSFET; hole mobility enhancement; p-type MOSFET; silicon substrate; Ballistic transport; CMOS technology; Charge carrier processes; Dielectric substrates; Electrodes; Electron mobility; Fabrication; MOSFETs; Schottky barriers; Silicon;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.841442
