Title :
New insights on the post-BD conduction of MOS devices at the nanoscale
Author :
Porti, M. ; Meli, S. ; Nafría, M. ; Aymerich, X.
Author_Institution :
Dept. d´´Enginyeria Electron., Univ. Autonoma de Barcelona, Bellaterra, Spain
Abstract :
We have combined standard electrical tests with conductive-atomic force microscopy experiments to investigate the conduction of MOS devices after the dielectric breakdown (BD) of the SiO2 gate oxide. In particular, the influence of the conduction nanometer scale parameters on the overall device post-BD current-voltage characteristics has been analyzed. The results show a nonuniform conductivity of the oxide at the BD area and that the total current flowing through the device is mainly driven by a very small fraction of that region.
Keywords :
MIS devices; atomic force microscopy; electrical conductivity; nanoelectronics; semiconductor device breakdown; semiconductor device reliability; silicon compounds; MOS devices; SiO2; atomic force microscopy; conduction nanometer scale parameters; current-voltage characteristics; dielectric breakdown; gate dielectric; nonuniform conductivity; post-BD conduction; semiconductor device reliability; Atomic force microscopy; Conductivity; Current measurement; Dielectric breakdown; MOS devices; MOSFET circuits; Nanoscale devices; Testing; Thermal stresses; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.841190
