Total dose dependence of soft-error hardness in 64 kbit SRAMs evaluated by single-ion microprobe technique

Author

Matsukawa, T. ; Kishida, A. ; Tanii, T. ; Koh, M. ; Horita, K. ; Hara, K. ; Shigeta, B. ; Goto, M. ; Matsuda, S. ; Kuboyama, S. ; Ohdomari, I.

Author_Institution

Sch. of Sci. & Eng., Waseda Univ., Tokyo, Japan

Volume

41

Issue

6

fYear

1994

Firstpage

2071

Lastpage

2076

Abstract

Total dose effect on the soft-error susceptibility of 64 kbit CMOS SRAM has been investigated by using the single ion microprobe technique which enables us to get a map of soft-error sensitivity in a memory cell by hitting a micron-size area with single ions. The effects of the ion dose on the susceptibility of each error-sensitive site have been evaluated. The errors due to the upset of p-MOSFETs have become more susceptible at higher dose while that of the n-MOSFETs less susceptible. One of the origins of the errors are the negative threshold voltage (V/sub th/) shifts of the MOSFETs which are caused by oxide trapped charges. Displacement damage induced by ion irradiation also affects the susceptibility to the soft-error.<>

Keywords

CMOS memory circuits; SRAM chips; errors; integrated circuit reliability; integrated circuit testing; ion beam effects; ion microprobe analysis; radiation hardening (electronics); 64 kbit; CMOS SRAM; displacement damage; ion dose; ion irradiation; memory cell; n-MOSFETs; negative threshold voltage shifts; oxide trapped charges; p-MOSFETs; single-ion microprobe technique; soft-error hardness; soft-error susceptibility; static RAM; total dose dependence; Artificial satellites; Electrons; Laboratories; MOSFET circuits; Materials science and technology; Random access memory; SRAM chips; Space technology; Testing; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.340544

Filename

340544