Title :
A novel approach for measuring the radial distribution of charge in a heavy-ion track
Author :
Howard, J.W., Jr. ; Block, R.C. ; Dussault, H. ; Stapor, W.J. ; McDonald, P.T. ; Knudson, A.R. ; Pinto, M.R.
Author_Institution :
Dept. of Nucl. Eng. & Eng. Phys., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
We describe the design and uses of possible semiconductor test structures for measuring the initial radial distribution of charge and subsequent charge transport in a high energy, heavy-ion track. Numerical simulations show how the test structure can resolve different radial distributions of charge within an ion track. The test structure simulations also show the importance of accurately representing ion track structure in single event effects simulations.<>
Keywords :
Schottky barriers; Schottky diodes; digital simulation; ion beam effects; semiconductor device models; semiconductor device testing; Schottky barrier rings; charge transport; heavy-ion track; ion track structure; radial charge distribution; semiconductor test structures; single event effects simulations; test structure simulations; Charge measurement; Current measurement; Discrete event simulation; Energy resolution; Laboratories; Ohmic contacts; Physics; Schottky barriers; Silicon; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
