Title :
Two parameter model for predicting SEU rate [memory devices]
Author :
Miroshkin, V.V. ; Tverskoy, M.G.
Author_Institution :
Petersburg Nucl. Phys. Inst., Gatchina, Russia
Abstract :
Two parameter model (volume and threshold energy) for describing Single Event Upsets (SEU) rate in memory devices is proposed. The method of evaluation of these parameters is discussed. It is shown that there is a good agreement between experimental and calculated data.<>
Keywords :
errors; integrated circuit modelling; integrated memory circuits; radiation effects; SEU rate prediction; memory devices; single event upsets; threshold energy; two parameter model; volume; Data analysis; Modems; Nuclear physics; Predictive models; Projectiles; Protons; Radiation detectors; Semiconductor memory; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
