DocumentCode :
1215745
Title :
Lucky drift model for non-local impact ionisation incorporating a soft threshold energy
Author :
Marsland, J.S.
Author_Institution :
Dept. of Electr. Eng. & Electron., Univ. of Liverpool, UK
Volume :
150
Issue :
2
fYear :
2003
fDate :
4/18/2003 12:00:00 AM
Firstpage :
119
Lastpage :
124
Abstract :
The lucky drift model of impact ionisation is extended to consider non-local effects. Analytical expressions are developed for the ionisation pathlength probability distribution function (PDF) and good agreement is found with a numerical method based on lucky drift. The lucky drift expressions agree reasonably well with ionisation pathlength PDFs calculated using the Monte Carlo technique at moderately high electric fields (3×107 V m-1) but not at very high fields (108 V m-1) and a reason for this is proposed. Expressions for the non-local ionisation coefficient are found based on the lucky drift model and the expressions are evaluated numerically. Lucky drift is also used to find the probability of injection across a potential barrier and comparison with measurements shows good agreement except at very high electric field values. Reasons for the discrepancy at high fields are proposed.
Keywords :
Monte Carlo methods; impact ionisation; photodiodes; semiconductor device models; Monte Carlo technique; high electric fields; ionisation path length; ionisation pathlength probability distribution function; lucky drift model; nonlocal effects; nonlocal impact ionisation; numerical method; potential barrier; soft threshold energy; very high electric field values;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2433
Type :
jour
DOI :
10.1049/ip-opt:20030383
Filename :
1203098
Link To Document :
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