Title :
Recombination via nano-precipitates … a new mechanism for efficiency loss in solar silicon?
Author :
Peaker, A.R. ; Hamilton, Blaine ; Leonard, S. ; Markevich, V.P. ; Youssef, K. ; Rozgonyi, G.
Author_Institution :
Photon Sci. Inst., Univ. of Manchester, Manchester, UK
Abstract :
Fast diffusing metals in silicon can form large precipitates. Although such precipitates can be damaging because of junction leakage they are not powerful recombination centers. In contrast we have investigated the precipitation of slow diffusing metals and found that they can produce nano-precipitates with dimensions of 2 to 10 nm. These have strong recombination activity. In this paper we focus on molybdenum nano-precipitates and present an analysis of recombination behavior derived from deep level transient spectroscopy. The chemical species of the nano-precipitates has been determined using transmission electron microscopy.
Keywords :
elemental semiconductors; molybdenum; precipitation; silicon; solar cells; transmission electron microscopy; deep level transient spectroscopy; efficiency loss; molybdenum nanoprecipitates; nanoprecipitates; recombination behavior analysis; solar silicon; transmission electron microscopy; Annealing; Boron; Chemicals; Epitaxial growth; Lattices; Silicon; DLTS; TEM; nano-precipitates; photovoltaic cells; recombination lifetime; silicon;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6925076