• DocumentCode
    121587
  • Title

    Grain boundary characterization in multicrystalline silicon using joint EBSD, EBIC, and atom probe tomography

  • Author

    Stoffers, Andreas ; Cojocaru-Miredin, Oana ; Breitenstein, O. ; Seifert, Winfried ; Zaefferer, Stefan ; Raabe, Dierk

  • Author_Institution
    Max-Planck-Inst. fur Eisenforschung, Dusseldorf, Germany
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Abstract
    The efficiency of multicrystalline silicon solar cells suffers from the presence of extended defects like dislocations and grain boundaries. In fact, the defects themselves do not implicitly have to be harmful, but their interaction with impurities makes them detrimental for the cell efficiencies.
  • Keywords
    EBIC; elemental semiconductors; grain boundaries; silicon; solar cells; EBIC; EBSD; atom probe tomography; grain boundary characterization; multicrystalline silicon solar cells; Atomic measurements; Grain boundaries; Impurities; Photovoltaic cells; Probes; Silicon; Three-dimensional displays; atom probe tomography; grain boundaries; impurities; multicrystalline silicon solar cells; recombination activity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
  • Conference_Location
    Denver, CO
  • Type

    conf

  • DOI
    10.1109/PVSC.2014.6925089
  • Filename
    6925089
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=121587