Title :
Grain boundary characterization in multicrystalline silicon using joint EBSD, EBIC, and atom probe tomography
Author :
Stoffers, Andreas ; Cojocaru-Miredin, Oana ; Breitenstein, O. ; Seifert, Winfried ; Zaefferer, Stefan ; Raabe, Dierk
Author_Institution :
Max-Planck-Inst. fur Eisenforschung, Dusseldorf, Germany
Abstract :
The efficiency of multicrystalline silicon solar cells suffers from the presence of extended defects like dislocations and grain boundaries. In fact, the defects themselves do not implicitly have to be harmful, but their interaction with impurities makes them detrimental for the cell efficiencies.
Keywords :
EBIC; elemental semiconductors; grain boundaries; silicon; solar cells; EBIC; EBSD; atom probe tomography; grain boundary characterization; multicrystalline silicon solar cells; Atomic measurements; Grain boundaries; Impurities; Photovoltaic cells; Probes; Silicon; Three-dimensional displays; atom probe tomography; grain boundaries; impurities; multicrystalline silicon solar cells; recombination activity;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6925089
