Single event upset and charge collection measurements using high energy protons and neutrons

Author

Normand, E. ; Oberg, D.L. ; Wert, J.L. ; Ness, J.D. ; Majewski, P.P. ; Wender, S. ; Gavron, A.

Author_Institution

Boeing Defense & Space Group, Seattle, WA, USA

Volume

41

Issue

6

fYear

1994

Firstpage

2203

Lastpage

2209

Abstract

RAMs, microcontrollers and surface barrier detectors were exposed to beams of high energy protons and neutrons to measure the induced number of upsets as well as energy deposition. The WNR facility at Los Alamos provided a neutron spectrum similar to that of the atmospheric neutrons. Its effect on devices was compared to that of protons with energies of 200, 400, 500 and 800 MeV. Measurements indicate that SEU cross sections for 400 MeV protons are similar to those induced by the atmospheric neutron spectrum.<>

Keywords

charge measurement; digital integrated circuits; integrated circuit testing; integrated memory circuits; microcontrollers; monolithic integrated circuits; neutron effects; proton effects; random-access storage; 200 to 800 MeV; RAMs; SEU cross sections; atmospheric neutron spectrum; charge collection measurements; energy deposition; high energy neutrons; high energy protons; microcontrollers; microelectronic devices; single event upset measurements; surface barrier detectors; Atmospheric measurements; Charge measurement; Current measurement; Energy measurement; Microcontrollers; Neutrons; Particle beam measurements; Particle beams; Protons; Single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.340563

Filename

340563