Title :
The effect of layout modification on latchup triggering in CMOS by experimental and simulation approaches
Author :
De la Rochette, Hélène ; Bruguier, Guy ; Palau, Jean Marie ; Gasiot, Jean ; Ecoffet, Robert
Author_Institution :
Centre d´´Electron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Abstract :
The influence of certain geometrical parameters on latchup triggering in CMOS-1.2 /spl mu/m structure is studied by means of experiments and simulations on test structures. Electrical characterizations are made in order to validate quantitatively the analysis achieved by numerical simulations. The results of heavy ion irradiation from two different sources are given and discussed with regard to the influence of the same geometrical parameters on the sensitivity of the test structures to latchup.<>
Keywords :
CMOS integrated circuits; electrical faults; integrated circuit layout; integrated circuit reliability; ion beam effects; numerical analysis; simulation; 1.2 micron; CMOS IC; electrical characterizations; geometrical parameters; heavy ion irradiation; latchup sensitivity; latchup triggering; layout modification; monolithic IC layout; numerical simulation; CMOS technology; Circuit testing; Doping; Gain measurement; Implants; Manufacturing; Numerical simulation; Predictive models; Solid modeling; Steady-state;
Journal_Title :
Nuclear Science, IEEE Transactions on
