Title :
SOI 68T020 heavy ions evaluation
Author :
Lestrat, P. ; Terrier, C. ; Estreme, F. ; Rosier, L.H.
Author_Institution :
Thomson-CSF Semicond. Specifiques, Saint-Egreve, France
Abstract :
THOMSON-CSF Semiconducteurs Specifiques (TCS) and the CEA-LETI have developed a 0.8 /spl mu/m SOI bulk compatible process (HSOI4CB) for space and battle field applications. The main motivation for this process is to allow the transfer of already existing bulk circuits onto SOI with reduced redesign effort and performances degradation. In this paper, SOI process (HSOI4CB) and the 68020 transfer are summarized, including the most significant characteristics of the resulting product (68T020), in terms of Single Event Upset (SEU) and Single Event Latch-up (SEL). For the same revision version, the 68T020 comparisons with bulk or epitaxial 68020 processes are given.<>
Keywords :
integrated circuit testing; ion beam effects; silicon-on-insulator; 0.8 micron; 68020 transfer; 68T020; CEA-LETI; HSOI4CB; SEL; SEU; SOI bulk compatible process; Si; THOMSON-CSF; heavy ions evaluation; single event latchup; single event upset; CMOS technology; Cache memory; Circuits; Databases; Inverters; Microprocessors; Single event upset; Space technology; Standards development; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
