DocumentCode
1216001
Title
Effect of test method on the failure dose of SEEQ 28C256 EEPROM
Author
Verkasalo, Raimo
Author_Institution
VTT Electron., Oulu, Finland
Volume
41
Issue
6
fYear
1994
Firstpage
2600
Lastpage
2604
Abstract
Two lots of SEEQ 28C256 EEPROM were tested for total dose tolerance. Differences between them were found to result in a dependence of the relative superiority and failure doses of the two lots on the test method and the failure criterion. The failure doses were between 6 and 15 krad, and the failure mechanisms were an increase in the standby current and a loss of programmability.<>
Keywords
CMOS memory circuits; EPROM; failure analysis; integrated circuit reliability; integrated circuit testing; radiation effects; radiation hardening (electronics); 6 to 15 krad; CMOS memory chip; SEEQ 28C256 EEPROM; failure criterion; failure dose; failure mechanisms; programmability loss; standby current increase; test method; total dose tolerance; Annealing; Degradation; EPROM; Electronic equipment testing; Failure analysis; Hospitals; MOS devices; Manufacturing; Qualifications; Radiation hardening;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.340570
Filename
340570
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