Title :
Proton irradiation effects on advanced digital and microwave III-V components
Author :
Hash, G.L. ; Schwanck, J.R. ; Shaneyfelt, M.R. ; Sandoval, C.E. ; Conners, M.P. ; Sheridan, T.J. ; Sexton, F.W. ; Slayton, E.M. ; Heise, J.A. ; Foster, C.C.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
A wide range of advanced III-V components suitable for use in high-speed satellite communication systems were evaluated for displacement damage and single-event effects in high-energy, high-fluence proton environments. Transistors and integrated circuits (both digital and MMIC) were irradiated with protons at energies from 41 to 197 MeV and at fluences from 10/sup 10/ to 2/spl times/10/sup 14/ protons/cm/sup 2/. Large soft-error rates were measured for digital GaAs MESFET (3/spl times/10/sup -5/ errors/bit-day) and heterojunction bipolar circuits (10/sup -5/ errors/bit-day). No transient signals were detected from MMIC circuits. The largest degradation in transistor response caused by displacement damage was observed for 1.0-/spl mu/m depletion- and enhancement-mode MESFET transistors. Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced damage. These results show that memory-intensive GaAs digital circuits may result in significant system degradation due to single-event upset in natural and man-made space environments. However, displacement damage effects should not be a limiting factor for fluence levels up to 10/sup 14/ protons/cm/sup 2/ [equivalent to total doses in excess of 10 Mrad(GaAs)].<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; digital integrated circuits; heterojunction bipolar transistors; proton effects; space vehicle electronics; 1.0 micron; 41 to 197 MeV; GaAs; MESFET circuits; MMIC; advanced III-V components; depletion-mode MESFET transistors; digital integrated circuits; displacement damage; enhancement-mode MESFET transistors; gate length; heterojunction bipolar circuits; high-fluence proton environments; high-speed satellite communication systems; proton irradiation effects; single-event effects; soft-error rates; space environments; system degradation; Degradation; Digital integrated circuits; Gallium arsenide; III-V semiconductor materials; Integrated circuit measurements; MESFETs; MMICs; Microwave transistors; Protons; Satellite communication;
Journal_Title :
Nuclear Science, IEEE Transactions on
