Title :
Effect of hydrogen passivation on optical properties of a-Si/SiNX multilayered films with Si-QDs and without Si-QDs
Author :
Rai, Dharmendra Kumar R. ; Ranjan, Bibhuti ; Panchal, Ashish K. ; Balasubramaniam, K.R. ; Solanki, Chetan Singh
Author_Institution :
Dept. of Energy Sci. & Eng., IIT Bombay, Mumbai, India
Abstract :
The objective is to develop better understanding of the optical behavior of a-Si/SiNX multilayer with silicon quantum dots (Si-QDs) which can be used as light absorber material for Si-QD based solar cells. In this work, reflectance of a-Si, SiNX/a-Si, a-Si/SiNX and SiNX/a-Si/SiNX structured films with Si-QDs and without Si-QDs were examined. Hydrogen passivation (H-passivation) of a film with Si-QDs or without Si-QDs showed negligible effect on the optical property of the film. The films with Si-QDs before and after H-passivation showed low reflectance of light in the wavelength range of 200-600 nm compared to the films without Si-QDs. The enhancement in the absorption of light in the films is attributed to the Si-QDs and the quantum confinement effect (QCE).
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; light absorption; multilayers; passivation; semiconductor quantum dots; semiconductor thin films; silicon; silicon compounds; solar cells; Si; Si-QD based solar cells; Si-SiNX; SiNX-Si-SiNX; hydrogen passivation effect; light absorber material; multilayered films; optical properties; optical property; quantum confinement effect; silicon quantum dots; wavelength 200 nm to 600 nm; Absorption; Passivation; Periodic structures; Photovoltaic cells; Photovoltaic systems; Quantum dots; Silicon; H-passivation; amorphous silicon; hot-wire CVD; multilayer; quantum confinement effect; quantum dot; reflectance;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6925106
