The use of spectroscopic ellipsometry to predict the radiation response of SIMOX

Author

Mrstik, B.J. ; McMarr, P.J. ; Lawrence, R.K. ; Hughes, H.L.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

41

Issue

6

fYear

1994

Firstpage

2277

Lastpage

2283

Abstract

We have studied SIMOX (Separation by Implantation of Oxygen) material using spectroscopic ellipsometry to determine the structure of the buried oxide and C-V measurements to determine the radiation response of the buried oxide. Our ellipsometric measurements indicate that the buried oxide is best described as a layer of stoichiometric SiO/sub 2/ which is more dense than bulk vitreous (v-) SiO/sub 2/. We find that the radiation response of the buried oxide is determined primarily by its density. We also find that small variations in the conditions used to prepare the SIMOX wafer can significantly affect the oxide density and its radiation response. The density of the buried oxide is also found to affect how it etches.<>

Keywords

SIMOX; ellipsometry; etching; ion implantation; radiation effects; silicon compounds; C-V measurements; SIMOX; SiO/sub 2/; buried oxide; etch response; oxide density; radiation response; spectroscopic ellipsometry; Annealing; Argon; Capacitance measurement; Capacitance-voltage characteristics; Ellipsometry; Etching; Implants; Spectroscopy; Temperature; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.340576

Filename

340576