Fully-depleted submicron SOI for radiation hardened applications

Author

Brady, F.T. ; Scott, T. ; Brown, R. ; Damato, J. ; Haddad, N.F.

Author_Institution

Loral Federal Syst., Manassas, VA, USA

Volume

41

Issue

6

fYear

1994

Firstpage

2304

Lastpage

2309

Abstract

Using fully-depleted technology, the Loral 256K SOI SRAM has demonstrated under worst case SEU and prompt dose testing an LET threshold of at least 80 MeV cm/sup /spl and/2//mg, and a prompt dose rate upset level of greater then 4E10 rad(Si)/s, respectively, without design hardening. Total dose testing on transistors fabricated on enhanced bond and etchback SOI substrates indicates over 100 krad(Si) capability. Together, these results represent the first description of a fully depleted SOI technology for all radiation-hardened applications except extreme total dose.<>

Keywords

SRAM chips; radiation effects; radiation hardening (electronics); silicon-on-insulator; 256 Kbit; LET threshold; Loral 256K SOI SRAM; Si; enhanced bond; etchback SOI substrates; extreme total dose; fully depleted SOI technology; fully-depleted submicron SOI; fully-depleted technology; prompt dose rate upset level; prompt dose testing; radiation hardened applications; radiation-hardened applications; total dose testing; transistors; worst case SEU; Doping; Etching; Isolation technology; Radiation hardening; Random access memory; Semiconductor films; Silicon; Substrates; Testing; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.340580

Filename

340580